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| Part Number | TRS6E65C,S1AQ | 
| Datasheet | TRS6E65C,S1AQ datasheet | 
| Description | DIODE SCHOTTKY 650V 6A TO220-2L | 
| Manufacturer | Toshiba Semiconductor and Storage | 
| Series | - | 
| Part Status | Not For New Designs | 
| Diode Type | Silicon Carbide Schottky | 
| Voltage - DC Reverse (Vr) (Max) | 650V | 
| Current - Average Rectified (Io) | 6A (DC) | 
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 6A | 
| Speed | No Recovery Time > 500mA (Io) | 
| Reverse Recovery Time (trr) | 0ns | 
| Current - Reverse Leakage @ Vr | 90µA @ 650V | 
| Capacitance @ Vr, F | 35pF @ 650V, 1MHz | 
| Mounting Type | Through Hole | 
| Package / Case | TO-220-2 | 
| Supplier Device Package | TO-220-2L | 
| Operating Temperature - Junction | 175°C (Max) |