Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM650P02CX RFG
Part Number | TSM650P02CX RFG |
Datasheet | TSM650P02CX RFG datasheet |
Description | MOSFET P-CHANNEL 20V 4.1A SOT23 |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.56W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |