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| Part Number | IPZ40N04S58R4ATMA1 |
| Datasheet | IPZ40N04S58R4ATMA1 datasheet |
| Description | MOSFET N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 771pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-32 |
| Package / Case | 8-PowerTDFN |