Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPZ40N04S58R4ATMA1
Part Number | IPZ40N04S58R4ATMA1 |
Datasheet | IPZ40N04S58R4ATMA1 datasheet |
Description | MOSFET N-CH 8TDSON |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 3.4V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 13.7nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 771pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 34W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8-32 |
Package / Case | 8-PowerTDFN |