Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF7473TRPBF
Part Number | IRF7473TRPBF |
Datasheet | IRF7473TRPBF datasheet |
Description | MOSFET N-CH 100V 6.9A 8-SOIC |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |