Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTA115GKAT146
Part Number | DTA115GKAT146 |
Datasheet | DTA115GKAT146 datasheet |
Description | TRANS PREBIAS PNP 200MW SMT3 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | - |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SMT3 |