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| Part Number | IXKC19N60C5 |
| Datasheet | IXKC19N60C5 datasheet |
| Description | MOSFET N-CH 600V 19A ISOPLUS220 |
| Manufacturer | IXYS |
| Series | CoolMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS220™ |
| Package / Case | ISOPLUS220™ |