Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPC60N04S4L06ATMA1
Part Number | IPC60N04S4L06ATMA1 |
Datasheet | IPC60N04S4L06ATMA1 datasheet |
Description | MOSFET N-CH 8TDSON |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8-23 |
Package / Case | 8-PowerVDFN |