Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / VQ1001P-E3
Part Number | VQ1001P-E3 |
Datasheet | VQ1001P-E3 datasheet |
Description | MOSFET 4N-CH 30V 0.83A 14DIP |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Obsolete |
FET Type | 4 N-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 830mA |
Rds On (Max) @ Id, Vgs | 1.75 Ohm @ 200mA, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | - |
Supplier Device Package | 14-DIP |