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| Part Number | SIS407ADN-T1-GE3 |
| Datasheet | SIS407ADN-T1-GE3 datasheet |
| Description | MOSFET P-CH 20V 18A 1212-8 PPAK |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 168nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 5875pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 39.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |