Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHJ8N60E-T1-GE3
Part Number | SIHJ8N60E-T1-GE3 |
Datasheet | SIHJ8N60E-T1-GE3 datasheet |
Description | MOSFET N-CH 600V POWERPAK SO-8L |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 520 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 754pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 89W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |