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| Part Number | SISS42DN-T1-GE3 |
| Datasheet | SISS42DN-T1-GE3 datasheet |
| Description | MOSFET N-CHAN 100V POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11.8A (Ta), 40.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14.4 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |