Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MJ11016G
Part Number | MJ11016G |
Datasheet | MJ11016G datasheet |
Description | TRANS NPN DARL 120V 30A TO3 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 30A |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
Power - Max | 200W |
Frequency - Transition | 4MHz |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-204 (TO-3) |