Product Introduction
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Product Specifications
Part Number |
BCR166B6327HTLA1 |
Datasheet |
BCR166B6327HTLA1 datasheet |
Description |
TRANS PREBIAS PNP 200MW SOT23-3 |
Manufacturer |
Infineon Technologies |
Series |
- |
Part Status |
Obsolete |
Transistor Type |
PNP - Pre-Biased |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Frequency - Transition |
160MHz |
Power - Max |
200mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
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