Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK6A60W,S4VX
Part Number | TK6A60W,S4VX |
Datasheet | TK6A60W,S4VX datasheet |
Description | MOSFET N CH 600V 6.2A TO-220SIS |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 30W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |