Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA439EDJ-T1-GE3
Part Number | SIA439EDJ-T1-GE3 |
Datasheet | SIA439EDJ-T1-GE3 datasheet |
Description | MOSFET P-CH 20V 28A SC-70-6L |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 8V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |