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| Part Number | SQ1922EEH-T1_GE3 | 
| Datasheet | SQ1922EEH-T1_GE3 datasheet | 
| Description | MOSFET 2N-CH 20V SC70-6 | 
| Manufacturer | Vishay Siliconix | 
| Series | Automotive, AEC-Q101, TrenchFET® | 
| Part Status | Active | 
| FET Type | 2 N-Channel (Dual) | 
| FET Feature | Standard | 
| Drain to Source Voltage (Vdss) | 20V | 
| Current - Continuous Drain (Id) @ 25°C | 840mA (Tc) | 
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 400mA, 4.5V | 
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V | 
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | 
| Power - Max | 1.5W | 
| Operating Temperature | -55°C ~ 175°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 
| Supplier Device Package | SC-70-6 |