Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF200P222
Part Number | IRF200P222 |
Datasheet | IRF200P222 datasheet |
Description | MOSFET N-CH 200V 182A TO247AC |
Manufacturer | Infineon Technologies |
Series | StrongIRFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 182A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.6 mOhm @ 82A, 10V |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 203nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9820pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 556W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |