Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / GT10G131(TE12L,Q)
Part Number | GT10G131(TE12L,Q) |
Datasheet | GT10G131(TE12L,Q) datasheet |
Description | IGBT 400V 1W 8-SOIC |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
Power - Max | 1W |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | 3.1µs/2µs |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package | 8-SOP (5.5x6.0) |