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Part Number | MBR600200CT |
Datasheet | MBR600200CT datasheet |
Description | DIODE SCHOTTKY 200V 300A 2 TOWER |
Manufacturer | GeneSiC Semiconductor |
Series | - |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) (per Diode) | 300A |
Voltage - Forward (Vf) (Max) @ If | 920mV @ 300A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 3mA @ 200V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Supplier Device Package | Twin Tower |