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| Part Number | MSRT100160(A)D | 
| Datasheet | MSRT100160(A)D datasheet | 
| Description | DIODE GEN 1.6KV 100A 3 TOWER | 
| Manufacturer | GeneSiC Semiconductor | 
| Series | - | 
| Part Status | Active | 
| Diode Configuration | 1 Pair Series Connection | 
| Diode Type | Standard | 
| Voltage - DC Reverse (Vr) (Max) | 1600V | 
| Current - Average Rectified (Io) (per Diode) | 100A | 
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 100A | 
| Speed | Standard Recovery >500ns, > 200mA (Io) | 
| Reverse Recovery Time (trr) | - | 
| Current - Reverse Leakage @ Vr | 10µA @ 1600V | 
| Operating Temperature - Junction | -55°C ~ 150°C | 
| Mounting Type | Chassis Mount | 
| Package / Case | Three Tower | 
| Supplier Device Package | Three Tower |