Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
IRF9956 |
Datasheet |
IRF9956 datasheet |
Description |
MOSFET 2N-CH 30V 3.5A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
3.5A |
Rds On (Max) @ Id, Vgs |
100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 15V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Latest Products for Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
MOSFET 2N-CH 20V 5.2A 8-SOIC
Infineon Technologies
MOSFET 2N-CH 30V 4.9A 8-SOIC
Infineon Technologies
MOSFET 2N-CH 30V 4.9A 8-SOIC
Infineon Technologies
MOSFET 2P-CH 20V 4.3A 8-SOIC
Infineon Technologies
MOSFET 2P-CH 20V 4.3A 8SOIC
Infineon Technologies
MOSFET 2P-CH 20V 4.3A 8-SOIC