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Part Number | PMGD8000LN,115 |
Description | MOSFET 2N-CH 30V 0.125A 6TSSOP |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 125mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V |
Power - Max | 200mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |