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| Part Number | TSM200N03DPQ33 RGG |
| Datasheet | TSM200N03DPQ33 RGG datasheet |
| Description | MOSFET 2 N-CH 30V 20A 8PDFN |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Power - Max | 20W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PDFN (3x3) |