Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / TSM200N03DPQ33 RGG
Part Number | TSM200N03DPQ33 RGG |
Datasheet | TSM200N03DPQ33 RGG datasheet |
Description | MOSFET 2 N-CH 30V 20A 8PDFN |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
Power - Max | 20W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PDFN (3x3) |