Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB45N06S3-16
Part Number | IPB45N06S3-16 |
Datasheet | IPB45N06S3-16 datasheet |
Description | MOSFET N-CH 55V 45A TO-263 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 15.4 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id | 4V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 65W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |