Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN360N10T
Part Number | IXFN360N10T |
Datasheet | IXFN360N10T datasheet |
Description | MOSFET N-CH 100V 360A SOT-227B |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 360A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 180A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 505nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 36000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 830W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |