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| Part Number | S1J R3G | 
| Datasheet | S1J R3G datasheet | 
| Description | DIODE GEN PURP 600V 1A DO214AC | 
| Manufacturer | Taiwan Semiconductor Corporation | 
| Series | - | 
| Part Status | Active | 
| Diode Type | Standard | 
| Voltage - DC Reverse (Vr) (Max) | 600V | 
| Current - Average Rectified (Io) | 1A | 
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A | 
| Speed | Standard Recovery >500ns, > 200mA (Io) | 
| Reverse Recovery Time (trr) | 1.5µs | 
| Current - Reverse Leakage @ Vr | 1µA @ 600V | 
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz | 
| Mounting Type | Surface Mount | 
| Package / Case | DO-214AC, SMA | 
| Supplier Device Package | DO-214AC (SMA) | 
| Operating Temperature - Junction | -55°C ~ 175°C |