
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP076N12N3GXKSA1

| Part Number | IPP076N12N3GXKSA1 |
| Datasheet | IPP076N12N3GXKSA1 datasheet |
| Description | MOSFET N-CH 120V 100A TO220-3 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.6 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 101nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640pF @ 60V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |