
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR422200A

| Part Number | UNR422200A | 
| Datasheet | UNR422200A datasheet | 
| Description | TRANS PREBIAS NPN 300MW NS-B1 | 
| Manufacturer | Panasonic Electronic Components | 
| Series | - | 
| Part Status | Obsolete | 
| Transistor Type | NPN - Pre-Biased | 
| Current - Collector (Ic) (Max) | 500mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 4.7 kOhms | 
| Resistor - Emitter Base (R2) | 4.7 kOhms | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 10V | 
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA | 
| Current - Collector Cutoff (Max) | 1µA | 
| Frequency - Transition | 200MHz | 
| Power - Max | 300mW | 
| Mounting Type | Through Hole | 
| Package / Case | 3-SSIP | 
| Supplier Device Package | NS-B1 |