Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1109,LF(CT

Product Introduction

RN1109,LF(CT

Part Number
RN1109,LF(CT
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 100MW SSM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
16pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN1109,LF(CT
Datasheet RN1109,LF(CT datasheet
Description TRANS PREBIAS NPN 100MW SSM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

BCR129WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR133WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR133WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR135WE6327BTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR135WH6327XTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

BCR141WE6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3