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Product Introduction
TH58BYG2S3HBAI6
- Part Number
- TH58BYG2S3HBAI6
- Manufacturer/Brand
- Toshiba Memory America, Inc.
- Description
- IC FLASH 4G PARALLEL 67VFBGA
- Category
- Memory
- RoHs Status
- Lead free / RoHS Compliant
- Series
- Benand™
- Quantity
- 6657pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | TH58BYG2S3HBAI6 |
| Description | IC FLASH 4G PARALLEL 67VFBGA |
| Manufacturer | Toshiba Memory America, Inc. |
| Series | Benand™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
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