Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT75GN120B2G
Part Number | APT75GN120B2G |
Datasheet | APT75GN120B2G datasheet |
Description | IGBT 1200V 200A 833W TMAX |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Not For New Designs |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 200A |
Current - Collector Pulsed (Icm) | 225A |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
Power - Max | 833W |
Switching Energy | 8045µJ (on), 7640µJ (off) |
Input Type | Standard |
Gate Charge | 425nC |
Td (on/off) @ 25°C | 60ns/620ns |
Test Condition | 800V, 75A, 1 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | - |