Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4946CDY-T1-GE3
Part Number | SI4946CDY-T1-GE3 |
Datasheet | SI4946CDY-T1-GE3 datasheet |
Description | MOSFET N-CHAN DUAL 60V SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 6.1A (Tc) |
Rds On (Max) @ Id, Vgs | 40.9 mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
Power - Max | 2W (Ta), 2.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |