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| Part Number | IDC08D120T6MX1SA2 | 
| Datasheet | IDC08D120T6MX1SA2 datasheet | 
| Description | DIODE GEN PURP 1.2KV 10A WAFER | 
| Manufacturer | Infineon Technologies | 
| Series | - | 
| Part Status | Active | 
| Diode Type | Standard | 
| Voltage - DC Reverse (Vr) (Max) | 1200V | 
| Current - Average Rectified (Io) | 10A | 
| Voltage - Forward (Vf) (Max) @ If | 2.05V @ 10A | 
| Speed | Standard Recovery >500ns, > 200mA (Io) | 
| Reverse Recovery Time (trr) | - | 
| Current - Reverse Leakage @ Vr | 2.7µA @ 1200V | 
| Capacitance @ Vr, F | - | 
| Mounting Type | Surface Mount | 
| Package / Case | Die | 
| Supplier Device Package | Sawn on foil | 
| Operating Temperature - Junction | -40°C ~ 175°C |