Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA13N80-F109
Part Number | FQA13N80-F109 |
Datasheet | FQA13N80-F109 datasheet |
Description | MOSFET N-CH 800V 12.6A TO-3P |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 6.3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |