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| Part Number | APT50GP60JDQ2 |
| Datasheet | APT50GP60JDQ2 datasheet |
| Description | IGBT 600V 100A 329W SOT227 |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| Part Status | Not For New Designs |
| IGBT Type | PT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Power - Max | 329W |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Current - Collector Cutoff (Max) | 525µA |
| Input Capacitance (Cies) @ Vce | 5.7nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | ISOTOP® |