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| Part Number | APTM100H80FT1G |
| Datasheet | APTM100H80FT1G datasheet |
| Description | MOSFET 4N-CH 1000V 11A SP1 |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Obsolete |
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Rds On (Max) @ Id, Vgs | 960 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3876pF @ 25V |
| Power - Max | 208W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP1 |
| Supplier Device Package | SP1 |