Product Introduction
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Product Specifications
Part Number |
IRF6645 |
Datasheet |
IRF6645 datasheet |
Description |
MOSFET N-CH 100V DIRECTFET-SJ |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
5.7A (Ta), 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
35 mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id |
4.9V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
890pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta), 42W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DIRECTFET™ SJ |
Package / Case |
DirectFET™ Isometric SJ |
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