Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQU10N20LTU
Part Number | FQU10N20LTU |
Datasheet | FQU10N20LTU datasheet |
Description | MOSFET N-CH 200V 7.6A IPAK |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |