Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NDD60N550U1-1G
Part Number | NDD60N550U1-1G |
Datasheet | NDD60N550U1-1G datasheet |
Description | MOSFET N-CH 600V 8.2A IPAK-4 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |