Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIS892DN-T1-GE3

Product Introduction

SIS892DN-T1-GE3

Part Number
SIS892DN-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 100V 30A 1212-8 PPAK
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8255pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SIS892DN-T1-GE3
Description MOSFET N-CH 100V 30A 1212-8 PPAK
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 611pF @ 50V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8

Latest Products for Transistors - FETs, MOSFETs - Single

SI7615ADN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 35A 1212-8S

SIS110DN-T1-GE3

Vishay Siliconix

MOSFET N-CHAN 100V POWERPAK 1212

SIS184DN-T1-GE3

Vishay Siliconix

MOSFET N-CHAN 60V POWERPAK 1212-

SIS322DNT-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 38.3A 1212-8

SIS606BDN-T1-GE3

Vishay Siliconix

MOSFET N-CHAN 100V POWERPAK 1212

SISA10DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 30A 1212-8

Related Products