Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYP10N65C3D1M
Part Number | IXYP10N65C3D1M |
Datasheet | IXYP10N65C3D1M datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX3™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 15A |
Current - Collector Pulsed (Icm) | 50A |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 10A |
Power - Max | 53W |
Switching Energy | 240µJ (on), 170µJ (off) |
Input Type | Standard |
Gate Charge | 18nC |
Td (on/off) @ 25°C | 20ns/77ns |
Test Condition | 400V, 10A, 50 Ohm, 15V |
Reverse Recovery Time (trr) | 26ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package | TO-220 Isolated Tab |