Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / LND01K1-G
Part Number | LND01K1-G |
Datasheet | LND01K1-G datasheet |
Description | MOSFET N-CH 9V 330MA SOT23-5 |
Manufacturer | Microchip Technology |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 9V |
Current - Continuous Drain (Id) @ 25°C | 330mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 100mA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | +0.6V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 5V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 360mW (Ta) |
Operating Temperature | -25°C ~ 125°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-5 |
Package / Case | SC-74A, SOT-753 |