Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZ998DT-T1-GE3
Part Number | SIZ998DT-T1-GE3 |
Datasheet | SIZ998DT-T1-GE3 datasheet |
Description | MOSFET 2 N-CH 30V 8-POWERPAIR |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual), Schottky |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 15V, 2620pF @ 15V |
Power - Max | 20.2W, 32.9W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® |