Product Introduction
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Product Specifications
Part Number |
AOI4S60 |
Datasheet |
AOI4S60 datasheet |
Description |
MOSFET N-CH 600V 4A TO251A |
Manufacturer |
Alpha & Omega Semiconductor Inc. |
Series |
aMOS™ |
Part Status |
Not For New Designs |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600V |
Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
900 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id |
4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
6nC @ 10V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
263pF @ 100V |
FET Feature |
- |
Power Dissipation (Max) |
56.8W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-251A |
Package / Case |
TO-251-3 Stub Leads, IPak |
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