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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK160F10N1L,LQ
Part Number | TK160F10N1L,LQ |
Datasheet | TK160F10N1L,LQ datasheet |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10100pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | TO-220SM(W) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |