
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3637L

| Part Number | JAN2N3637L |
| Datasheet | JAN2N3637L datasheet |
| Description | TRANS PNP 175V 1A |
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/357 |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 175V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |