Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3637L
Part Number | JAN2N3637L |
Datasheet | JAN2N3637L datasheet |
Description | TRANS PNP 175V 1A |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/357 |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |