Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF6616 |
Datasheet |
IRF6616 datasheet |
Description |
MOSFET N-CH 30V 19A DIRECTFET |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
19A (Ta), 106A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
5 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id |
2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
44nC @ 4.5V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3765pF @ 20V |
FET Feature |
- |
Power Dissipation (Max) |
2.8W (Ta), 89W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DIRECTFET™ MX |
Package / Case |
DirectFET™ Isometric MX |
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