Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2SD2257(Q,M)
Part Number | 2SD2257(Q,M) |
Datasheet | 2SD2257(Q,M) datasheet |
Description | TRANS NPN 3A 100V TO220-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
Power - Max | 2W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220NIS |