Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP65R190E6XKSA1
Product Introduction
IPP65R190E6XKSA1
- Part Number
- IPP65R190E6XKSA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 650V 20.2A TO220
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- CoolMOS™
- Quantity
- 243pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPP65R190E6XKSA1 |
| Datasheet | IPP65R190E6XKSA1 datasheet |
| Description | MOSFET N-CH 650V 20.2A TO220 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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