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| Part Number | 2SJ438,Q(J |
| Datasheet | 2SJ438,Q(J datasheet |
| Description | MOSFET P-CH |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | * |
| Part Status | Obsolete |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220NIS |
| Package / Case | TO-220-3 Full Pack |